SKM600GA124D Datasheet, PDF (4/6 Pages) Semikron International – low loss igbt modules

6.0  *$  '
20
V
18
M600GA124.XLS-13
I_Cpuls = 400 A
16
600
14
800V
12
10
8
6
4
V_GE ²
0
0
1000
Q_Gate
2000
3000
4000
nC
Fig. 13 Typ. gate charge characteristic
100
M600GA124.XLS-14
V_GE = 0 V
nF
C_ies
f = 1 MHz
10
C_oes
C
C_res
1
0 _VCE 10
20
30
V
Fig. 14 Typ. capacitances vs.V_CE
10000
ns
1000
100
M600GA124.XLS-15
t_doff
T_j = 125 °C
V_CE = 600 V
V_GE = ± 15 V
R_Gon = 4 Ω
R_Goff = 4 Ω
induct. load
10000
ns
1000
t_r
t_don
100
t_f
M600GA124.XLS-16
t_doff
T_j = 125 °C
V_CE = 600 V
V_GE = ± 15 V
I_C = 400 A
induct. load
t_don
t_r
t_f
t
t
10
0
200
400
600
800 1000
I_C
A
Fig. 15 Typ. switching times vs. I_C
10
2
4
6
8
10
12
R_G
Ω
Fig. 16 Typ. switching times vs. gate resistor R_G
800
A
600
400
T_j=125°C, typ.
T_j=25°C, typ.
T_j=125°C,
max.
T_j=25°C, max.
M600GA124.XLS-17
200
I_F
0
0
1
V_F
2
3
V
Fig. 17 Typ. CAL diode forward characteristic
%  ± 
40
mJ
35
30
M600GA124.XLS-18
R_G=
4Ω
V_CC = 600 V
T_j = 125 °C
V_GE = ± 15 V
25
5Ω
20
10 Ω
15
10
5
E_offD
0
0
200
400
600
800 1000
I_F
A
Fig. 18 Diode turn-off energy dissipation per pulse

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