SKM600GA12V_12 Datasheet, PDF (4/5 Pages) Semikron International – V-IGBT = 6. Generation Trench V-IGBT

SKM600GA12V
Fig. 7: Typ. switching times vs. I_C
Fig. 8: Typ. switching times vs. gate resistor R_G
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R_{CC'+ EE'}
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 4 – 15.08.2012
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