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SKM600GA12V_12 Datasheet, PDF (2/5 Pages) Semikron International – V-IGBT = 6. Generation Trench V-IGBT | |||
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SKM600GA12V
SEMITRANS® 4
SKM600GA12V
Features
⢠V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
⢠CAL4 = Soft switching 4. Generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
⢠UL recognized, file no. E63532
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠Low switching losses at high di/dt
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic welders
⢠Switched reluctance motor
Remarks
⢠Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 600 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 8600 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink M6
Mt
M6
to terminals
M4
w
min.
typ.
max. Unit
2.14
2.46
V
2.07
2.38
V
1.3
1.5
V
0.9
1.1
V
1.4
1.6
mï
1.9
2.1
mï
635
A
118
µC
43
mJ
0.086 K/W
15
20
nH
0.18
mï
0.22
mï
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
1.1
2
Nm
330
g
GA
2
Rev. 4 â 15.08.2012
© by SEMIKRON
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