SKM50GB12V Datasheet, PDF (2/3 Pages) Semikron International – SKM50GB12V

SKM50GB12V
SEMITRANS^® 2
SKM50GB12V
Target Data
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 50 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 50 A
T_j = 150 °C
di/dt_off = 1380 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M5
w
min.
typ.
max. Unit
2.2
2.5
V
2.2
2.5
V
1.3
1.5
V
0.9
1.1
V
18.4
20.8 mΩ
25.6
28.0 mΩ
35
A
8.7
µC
3.6
mJ
0.84 K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GB
2
Rev. 0 – 23.12.2009
© by SEMIKRON