SKM50GB12V Datasheet, PDF (1/3 Pages) Semikron International – SKM50GB12V

SKM50GB12V
SEMITRANS^® 2
SKM50GB12V
Target Data
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 720 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_FRM = 3xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 50 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 2 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_CC = 600 V
I_C = 50 A
V_GE = ±15 V
R_{G on} = 13 Ω
R_{G off} = 13 Ω
per IGBT
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
Values
1200
79
60
50
150
-20 ... 20
10
-40 ... 175
65
49
50
150
270
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.3
V
2.2
2.65
V
0.94
1.25
V
0.88
1.22
V
18.2
21.0 mΩ
26.4
28.6 mΩ
6
6.5
7
V
0.1
0.3
mA
mA
3
nF
0.30
nF
0.295
nF
540
nC
4.0
Ω
ns
ns
5
mJ
ns
ns
4
mJ
0.53 K/W
GB
© by SEMIKRON
Rev. 0 – 23.12.2009
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