SKM50GB063D_10 Datasheet, PDF (2/5 Pages) Semikron International – Superfast NPT-IGBT Modules

SKM50GB063D
SEMITRANS^® 2
Superfast NPT-IGBT
Modules
SKM50GB063D
Target Data
Features
• NPT = non punch-through
IGBT technology
• High short circuit capability, self
limiting to 6 x IC
• Pos. temp.-coeff. of VCEsat
• Isolated copper baseplate
Typical Applications*
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC
motor speed control
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 50 A
V_GE = 0 V
chip
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
Module
L_CE
R_CC'+EE'
I_F = 50 A
di/dt_off = 50 A/µs
V_GE = ±15 V
V_CC = 300 V
per diode
terminal-chip
R_th(c-s)
M_s
M_t
per module
to heat sink M6
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_C = 25 °C
T_C = 125 °C
to terminals M5
w
min.
typ.
max. Unit
1.35
1.60
V
1.35
1.60
V
1.05
1.2
V
0.9
1
V
6.0
8.0
mΩ
9.0
12.0 mΩ
31
A
3.2
µC
0.48
mJ
1
K/W
30
nH
0.65
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GB
2
Rev. 2 – 22.04.2010
© by SEMIKRON