SKM50GB063D_10 Datasheet, PDF (1/5 Pages) Semikron International – Superfast NPT-IGBT Modules

SKM50GB063D
SEMITRANS^® 2
Superfast NPT-IGBT
Modules
SKM50GB063D
Target Data
Features
• NPT = non punch-through
IGBT technology
• High short circuit capability, self
limiting to 6 x IC
• Pos. temp.-coeff. of VCEsat
• Isolated copper baseplate
Typical Applications*
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC
motor speed control
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 150 °C
T_c = 25 °C
T_c = 75 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 300 V
V_GE ≤ 20 V
V_CES ≤ 600 V
T_j = 125 °C
Inverse diode
I_F
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FSM
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_terminal < 80 °C
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
I_C = 50 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE = 15 V
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 1 mA
V_GE = 0 V
V_CE = 600 V
T_j = 25 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 20 V
T_j = 25 °C
V_CC = 300 V
I_C = 50 A
V_GE = ±15 V
R_{G on} = 22 Ω
R_{G off} = 22 Ω
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Values
600
70
51
50
100
-20 ... 20
10
-55 ... 150
75
45
50
100
-40 ... 150
200
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2.1
2.5
V
2.4
2.8
V
1.05
1.3
V
1
1.2
V
21.0
24.0 mΩ
28.0
32.0 mΩ
4.5
5.5
6.5
V
0.1
0.3
mA
mA
2.2
nF
nF
0.2
nF
nC
Ω
50
ns
40
ns
2.5
mJ
300
ns
30
ns
1.8
mJ
0.5 K/W
GB
© by SEMIKRON
Rev. 2 – 22.04.2010
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