SKM500MB120SC Datasheet, PDF (2/3 Pages) Semikron International – SiC MOSFET Module

SKM500MB120SC
SEMITRANS^® 3
SiC MOSFET Module
Characteristics
Symbol Conditions
Module
L_DS
R_CC'+EE'
terminal-chip
Rth_(c-s)1
Rth_(c-s)2
M_s
M_t
per module
including thermal coupling,
Ts underneath module
to heat sink M6
to terminals M6
w
min.
3
2.5
typ.
15
0.55
0.85
t.b.d
max. Unit
nH
mΩ
mΩ
K/W
K/W
5
Nm
5
Nm
Nm
325
g
SKM500MB120SC
Target Data
Features
• Full Silicon Carbide (SiC) power
module
• Latest generation SiC MOSFETs
• Optimized for fast switching and lowest
power losses
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• UL recognized, file no. E63532
Typical Applications*
• High frequency power supplies
• AC inverters
Remarks
• Case temperature limited to Tc=125°C
max.
• Recommended Top= -40…+150°C
MB
2
Rev. 0.1 – 27.05.2015
© by SEMIKRON