SKM500MB120SC Datasheet, PDF (1/3 Pages) Semikron International – SiC MOSFET Module

SKM500MB120SC
SEMITRANS^® 3
SiC MOSFET Module
SKM500MB120SC
Target Data
Features
• Full Silicon Carbide (SiC) power
module
• Latest generation SiC MOSFETs
• Optimized for fast switching and lowest
power losses
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• UL recognized, file no. E63532
Typical Applications*
• High frequency power supplies
• AC inverters
Remarks
• Case temperature limited to Tc=125°C
max.
• Recommended Top= -40…+150°C
Absolute Maximum Ratings
Symbol Conditions
MOS-Chip
V_DS
I_D
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_DM
V_GS
T_j
Integrated MOS-diode
I_F = - I_S
I_FM = - I_SM
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
MOS-Chip
V_(BR)DSS
V_GS(th)
I_DSS
V_GS = 0 V, I_D = 1 mA
V_GS = V_GS, I_D = 106.8 mA
V_GS = 0 V
T_j = 25 °C
T_j = 125 °C
I_GSS
R_DS(on)
V_GS = 22 V, V_DS = 0 V
V_GS = 18 V
I_D = 264 A
T_j = 25 °C
T_j = 150 °C
C_iss
C_oss
C_rss
V_GS = 0 V
V_DS = 800 V
f = 1 MHz
R_Gint
Q_G
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
25 °C
V_GS = 18 V
V_DD = 600 V
T_j = 150 °C
I_D = 250 A
T_j = 150 °C
V_GS = -6 ... 20 V
R_Gon = 2 Ω
R_Goff = 2 Ω
T_j = 150 °C
T_j = 150 °C
di/dt_on = 7000 A/µs ^Tj ^{= 150 °C}
di/dt_off = 6800 A/µs T_j = 150 °C
R_th(j-c)
R_th(c-s)
Integrated MOS-diode
V_SD
, V_GS = 0 V
t_rr
Q_rr
Irr
Values
1200
541
431
1920
-6 ... 22
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
V
°C
A
A
A
°C
V
min.
typ.
max. Unit
1200
1.6
1
3.75
5.67
44.4
1.644
0.336
0.39
2268
270
70
400
65
10.3
4.7
V
4
V
10
µA
µA
100
nA
4.67 mΩ
mΩ
nF
nF
nF
Ω
nC
ns
ns
ns
ns
mJ
mJ
0.07 K/W
0.035 K/W
V
µs
µC
A
MB
© by SEMIKRON
Rev. 0.1 – 27.05.2015
1