SKM450GB12T4 Datasheet, PDF (2/6 Pages) Semikron International – Fast IGBT4 Modules

SKM450GB12T4
SEMITRANS^® 3
Fast IGBT4 Modules
SKM450GB12T4
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 450 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 450 A
T_j = 150 °C
di/dt_off = 8000 A/µs
V_GE = 15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
measured per
switch
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
to terminals M6
w
min.
typ.
max. Unit
2.31
2.65
V
2.31
2.64
V
1.30
1.50
V
0.90
1.10
V
2.3
2.6
mΩ
3.1
3.4
mΩ
440
A
65
µC
28
mJ
0.13 K/W
15
nH
0.55
mΩ
0.85
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GB
2
Rev. 1.0 – 01.03.2016
© by SEMIKRON