SKM450GB12T4 Datasheet, PDF (1/6 Pages) Semikron International – Fast IGBT4 Modules

SKM450GB12T4
SEMITRANS^® 3
Fast IGBT4 Modules
SKM450GB12T4
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
V_GES
t_psc
T_j
V_CC = 800 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
I_C = 450 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 16.4 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 450 A
V_GE = +15/-15 V
R_{G on} = 1 Ω
R_{G off} = 1 Ω
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 8300 A/µs T_j = 150 °C
di/dt_off = 3800 A/µs
du/dt = 3700 V/µs T_j = 150 °C
R_th(j-c)
per IGBT
Values
1200
699
538
450
1350
-20 ... 20
10
-40 ... 175
461
345
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.84
2.07
V
2.23
2.42
V
0.80
0.90
V
0.70
0.80
V
2.3
2.6
mΩ
3.4
3.6
mΩ
5.3
5.8
6.3
V
5
mA
-
mA
27.2
nF
1.76
nF
1.50
nF
2500
nC
1.9
Ω
224
ns
59
ns
32
mJ
460
ns
91
ns
49
mJ
0.062 K/W
GB
© by SEMIKRON
Rev. 1.0 – 01.03.2016
1