SKM450GB12E4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules

SKM450GB12E4
SEMITRANS^® 3
IGBT4 Modules
SKM450GB12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 450 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 450 A
T_j = 150 °C
di/dt_off = 8300 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
to terminals M6
w
min.
typ.
max. Unit
2.31
2.65
V
2.31
2.64
V
1.3
1.5
V
0.9
1.1
V
2.3
2.6
mΩ
3.1
3.4
mΩ
452
A
62
µC
28
mJ
0.14 K/W
15
20
nH
0.25
mΩ
0.5
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GB
2
Rev. 3 – 09.07.2014
© by SEMIKRON