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SKM450GB12E4 Datasheet, PDF (1/5 Pages) Semikron International – IGBT4 Modules | |||
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SKM450GB12E4
SEMITRANS® 3
IGBT4 Modules
SKM450GB12E4
Features
⢠IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
⢠CAL4 = Soft switching 4. generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠For higher switching frequenzies up to
12kHz
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
Remarks
⢠Case temperature limited
to Tc = 125°C max.
⢠Recommended Top = -40 ... +150°C
⢠Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 16.4 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 450 A
VGE = +15/-15 V
RG on = 1 â¦
RG off = 1 â¦
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 8100 A/µs Tj = 150 °C
di/dtoff = 3400 A/µs
Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200
700
538
450
1350
-20 ... 20
10
-40 ... 175
440
329
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.82
2.07
V
2.23
2.44
V
0.8
0.9
V
0.7
0.8
V
2.27
2.61 mâ¦
3.41
3.64 mâ¦
5
5.8
6.5
V
5
mA
mA
27.2
nF
1.76
nF
1.50
nF
2500
nC
1.9
â¦
246
ns
59
ns
32
mJ
529
ns
102
ns
60
mJ
0.062 K/W
GB
© by SEMIKRON
Rev. 3 â 09.07.2014
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