SKM400GB07E3 Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM400GB07E3
SEMITRANS^® 3
Trench IGBT Modules
SKM400GB07E3
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated gate resistor
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
• Use of soft R_G necessary
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 7000 A/µs
V_GE = -8 V
T_j = 150 °C
V_CC = 300 V
L_s = 18 nH
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
measured per
switch
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
1.39
1.75
V
1.38
1.76
V
1.04
1.24
V
0.85
0.99
V
0.88
1.30 mΩ
1.32
1.93 mΩ
459
A
61
µC
12
mJ
0.19 K/W
15
nH
0.55
mΩ
0.85
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GB
2
Rev. 2.0 – 15.07.2016
© by SEMIKRON