SKM400GB07E3 Datasheet, PDF (1/6 Pages) Semikron International – Trench IGBT Modules

SKM400GB07E3
SEMITRANS^® 3
Trench IGBT Modules
SKM400GB07E3
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated gate resistor
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
• Use of soft R_G necessary
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
V_GES
t_psc
T_j
V_CC = 360 V
V_GE ≤ 15 V
V_CES ≤ 650 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 400 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 6.4 mA
V_GE = 0 V
V_CE = 650 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 300 V
T_j = 150 °C
I_C = 400 A
V_GE = +15/-7.5 V
R_{G on} = 1 Ω
R_{G off} = 4.2 Ω
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 7000 A/µs T_j = 150 °C
di/dt_off = 5000 A/µs
du/dt = 2200 V/µs T_j = 150 °C
L_s = 18 nH
per IGBT
Values
650
506
381
400
1200
-20 ... 20
6
-40 ... 175
449
326
400
800
2646
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.92
V
1.70
2.10
V
0.90
1.00
V
0.82
0.90
V
1.38
2.3
mΩ
2.2
3.0
mΩ
5.1
5.8
6.4
V
0.8
mA
-
mA
24.7
nF
1.54
nF
0.73
nF
3200
nC
1.0
Ω
190
ns
60
ns
4
mJ
850
ns
50
ns
17
mJ
0.12 K/W
GB
© by SEMIKRON
Rev. 2.0 – 15.07.2016
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