SKM400GARL066T Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKM400GARL066T
SEMITRANS^® 5
Trench IGBT Modules
SKM400GARL066T
Features
• Homogeneous Si
• Trench = trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• Integrated NTC temperature sensor
• UL recognized, file no. E63532
Typical Applications*
• UPS
• Inverter
Remarks
• Case temperature limited to Tc=125°C
max
• Reccomended Top=-40..+150°C
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
Conditions
V_CC = 300 V
I_C = 400 A
V_GE = +15/-8 V
R_{G on} = 0.5 Ω
R_{G off} = 0.5 Ω
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 2000 A/µs T_j = 150 °C
di/dt_off = 2000 A/µs
T_j = 150 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 50 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
I_F = 50 A
V_GE = ±15 V
V_CC = 300 V
per diode
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
Freewheeling diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 2000 A/µs
V_GE = -8 V
T_j = 150 °C
V_CC = 300 V
T_j = 150 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M6
min.
typ.
93
72
4.48
317
102
15.78
max.
0.12
1.54
1.78
1.59
1.83
1
1.1
0.85
0.95
10.8
13.5
14.9
17.6
1.87
1.35
1.53
1.33
1.52
1
1.1
0.85
0.95
0.9
1.1
1.2
1.4
350
24
8
0.23
0.038
3
5
2.5
5
w
Temperature Sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];
310
493 ± 5%
3550
±2%
Unit
ns
ns
mJ
ns
ns
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
Ω
K
GARL-T
2
Rev. 1 – 12.02.2015
© by SEMIKRON