SKM400GARL066T Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SKM400GARL066T
SEMITRANS^® 5
Trench IGBT Modules
SKM400GARL066T
Features
• Homogeneous Si
• Trench = trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• Integrated NTC temperature sensor
• UL recognized, file no. E63532
Typical Applications*
• UPS
• Inverter
Remarks
• Case temperature limited to Tc=125°C
max
• Reccomended Top=-40..+150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 2xI_Cnom
V_GES
t_psc
T_j
V_CC = 360 V
V_GE ≤ 15 V
V_CES ≤ 600 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Freewheeling diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
I_C = 400 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 6.4 mA
V_GE = 0 V
V_CE = 600 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
Values
600
504
379
400
800
-20 ... 20
6
-40 ... 175
46
33
50
100
345
-40 ... 175
421
301
400
800
2880
-40 ... 175
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.85
V
1.70
2.10
V
0.9
1
V
0.85
0.9
V
1.38
2.13 mΩ
2.13
3.00 mΩ
5
5.8
6.5
V
0.21 mA
mA
24.7
nF
1.54
nF
0.73
nF
3800
nC
1
Ω
GARL-T
© by SEMIKRON
Rev. 1 – 12.02.2015
1