SKM400GAL12V Datasheet, PDF (2/5 Pages) Semikron International – SEMITRANS

SKM400GAL12V
SEMITRANS^® 3
SKM400GAL12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Characteristics
Symbol Conditions
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
V_CC = 600 V
T_j = 150 °C
I_C = 400 A
V_GE = ±15 V
R_{G on} = 3 
R_{G off} = 3 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 9800 A/µs T_j = 150 °C
di/dt_off = 5000 A/µs
du/dt_off = 7600 V/ _{Tj = 150 °C}
µs
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 9500 A/µs
V_GE = ±15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 8800 A/µs
V_GE = ±15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per Diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
terminal-chip
per module
to heat sink M6
T_C = 25 °C
T_C = 125 °C
to terminals M6
w
min.
typ.
max. Unit
350
ns
60
ns
39
mJ
700
ns
65
ns
42
mJ
0.072 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
2.3
2.5
m
3.1
3.4
m
450
A
58
µC
26
mJ
0.14 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
2.3
2.5
m
3.1
3.4
m
450
A
68
µC
30.5
mJ
0.14 K/W
15
20
nH
0.25
m
0.5
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAL
2
Rev. 3 – 23.03.2011
© by SEMIKRON