 English |
|
|
|
|
|
|
|
| SKM400GAL12V Datasheet, PDF (1/5 Pages) Semikron International – SEMITRANS | |||
| |||
|
SKM400GAL12V
SEMITRANS® 3
SKM400GAL12V
Features
⢠V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
⢠CAL4 = Soft switching 4. Generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
⢠UL recognized, file no. E63532
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠Low switching losses at high di/dt
Typical Applications*
⢠Electronic welders
⢠DC/DC â converter
⢠Brake chopper
⢠Switched reluctance motor
Remarks
⢠Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 720 V
VGE ⤠20 V
VCES ⤠1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 400 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 16 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Values
1200
612
467
400
1200
-20 ... 20
10
-40 ... 175
440
329
400
1200
1980
-40 ... 175
440
329
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5.5
typ.
1.75
2.20
0.94
0.88
2.02
3.30
6
0.1
24.04
2.36
2.356
4420
1.9
max. Unit
2.20
V
2.50
V
1.04
V
0.98
V
2.9
mï
3.80 mï
6.5
V
0.3
mA
mA
nF
nF
nF
nC
ï
GAL
© by SEMIKRON
Rev. 3 â 23.03.2011
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese