SKM400GA12V_12 Datasheet, PDF (2/5 Pages) Semikron International – V-IGBT = 6. Generation Trench V-IGBT

SKM400GA12V
SEMITRANS^® 4
SKM400GA12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 9500 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
M6
to terminals
M4
w
min.
typ.
max. Unit
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
2.3
2.5
m
3.1
3.4
m
450
A
58
µC
26
mJ
0.14 K/W
15
20
nH
0.18
m
0.22
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
1.1
2
Nm
330
g
GA
2
Rev. 4 – 15.08.2012
© by SEMIKRON