SKM400GA12V_12 Datasheet, PDF (1/5 Pages) Semikron International – V-IGBT = 6. Generation Trench V-IGBT

SKM400GA12V
SEMITRANS^® 4
SKM400GA12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
V_GES
t_psc
T_j
V_CC = 720 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
T_terminal = 80 °C
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 400 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 16 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
V_CC = 600 V
T_j = 150 °C
I_C = 400 A
V_GE = ±15 V
R_{G on} = 3 
R_{G off} = 3 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 9800 A/µs T_j = 150 °C
di/dt_off = 5000 A/µs
du/dt_off = 7600 V/ T_j = 150 °C
µs
per IGBT
Values
1200
612
467
400
1200
-20 ... 20
10
-40 ... 175
440
329
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.75
2.20
V
2.20
2.50
V
0.94
1.04
V
0.88
0.98
V
2.02
2.90 m
3.30
3.80 m
5.5
6
6.5
V
0.1
0.3
mA
mA
24.04
nF
2.36
nF
2.356
nF
4420
nC
1.88

350
ns
60
ns
39
mJ
700
ns
65
ns
42
mJ
0.072 K/W
GA
© by SEMIKRON
Rev. 4 – 15.08.2012
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