SKM350MB120SCH17 Datasheet, PDF (2/4 Pages) Semikron International – SiC MOSFET Module

SKM350MB120SCH17
SEMITRANS^® 3
SiC MOSFET Module
Engineering Sample
SKM350MB120SCH17
Target Data
Features
• Full Silicon Carbide (SiC) power
module
• Latest generation SiC MOSFETs
• External SiC Schottky Barrier Diode
embedded
• Optimized for fast switching and lowest
power losses
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Improved thermal performances with
Aluminium Nitride (AlN) substrate
• UL recognized, file no. E63532
Typical Applications*
• High frequency power supplies
• AC inverters
Remarks
• Case temperature limited to Tc=125°C
max.
• Recommended Top= -40…+150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC ^IF ^{= 100 A}
T_j = 25 °C
V_F0
r_F
C_j
Q_c
R_th(j-c)
R_th(c-s)
chiplevel
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
T_j = 25 °C
T_j = 150 °C
parallel to C_oss, 1 MHz, 800 V, 25 °C
800 V, 500 A/µs, 25 °C
per diode
per diode
Characteristics
Symbol Conditions
Module
L_CE
R_CC'+EE'
Rth_(c-s)1
Rth_(c-s)2
M_s
M_t
measured per switch,
per module
including thermal coupling,
Ts underneath module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
1.40
1.80
0.95
0.80
4.5
10.0
0.42
0.334
-
1.60
V
2.20
V
1.05
V
0.90
V
5.5
mΩ
13
mΩ
nF
µC
0.18 K/W
0.12 K/W
min.
typ.
max. Unit
15
nH
0.55
mΩ
0.012
K/W
0.0189
K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
MB
2
Rev. 0.2 – 31.05.2016
© by SEMIKRON