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SKM350MB120SCH17 Datasheet, PDF (1/4 Pages) Semikron International – SiC MOSFET Module
SKM350MB120SCH17
SEMITRANS® 3
SiC MOSFET Module
Engineering Sample
SKM350MB120SCH17
Target Data
Features
• Full Silicon Carbide (SiC) power
module
• Latest generation SiC MOSFETs
• External SiC Schottky Barrier Diode
embedded
• Optimized for fast switching and lowest
power losses
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Improved thermal performances with
Aluminium Nitride (AlN) substrate
• UL recognized, file no. E63532
Typical Applications*
• High frequency power supplies
• AC inverters
Remarks
• Case temperature limited to Tc=125°C
max.
• Recommended Top= -40…+150°C
MB
Absolute Maximum Ratings
Symbol Conditions
MOSFET
VDSS
ID
Tj = 175 °C
IDM
VGS
Tj
Integrated body Diode
IFM
Tc = 25 °C
Tc = 80 °C
Absolute Maximum Ratings
Symbol Conditions
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
IFRM = 3xIFnom
tp = 8.3 ms, sin 180°, Tj = 25 °C
Tj
Absolute Maximum Ratings
Symbol Conditions
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
MOSFET
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
Ciss
Coss
Crss
RGint
QG
td(on)
tr
td(off)
tf
Eon
VGS = 0 V, ID = 8 mA
VGS = VGS, ID = 71.2 mA
VGS = 0 V, VDS = 1200 V, Tj = 25 °C
VGS = 22 V, VDS = 0 V
VGS = 18 V
ID = 176 A
Tj = 25 °C
Tj = 150 °C
VGS = 0 V
VDS = 800 V
f = 1 MHz
25 °C
VGS = 18 V
VDD = 600 V
ID = 300 A
VGS = -5 ... 20 V
RGon = 0.5 Ω
RGoff = 1 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-c)
Rth(c-s)
per MOSFET
per MOSFET
© by SEMIKRON
Rev. 0.2 – 31.05.2016
Values
1200
523
416
1280
-6 ... 22
-40 ... 175
Unit
V
A
A
A
V
°C
A
Values
1200
212
163
100
300
373
-40 ... 175
Unit
V
A
A
A
A
A
°C
Values
500
-40 ... 125
4000
Unit
A
°C
V
min.
typ.
max. Unit
1200
1.6
5.6
9.5
34.48
1.096
0.152
0.6
1512
4.73
2.3
V
4
V
0.08 mA
600
nA
7.0
mΩ
mΩ
nF
nF
nF
Ω
nC
ns
ns
ns
ns
mJ
mJ
0.045 K/W
0.03 K/W
1
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