SKM300GBD12T4 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules

SKM300GBD12T4
SEMITRANS^® 3
Fast IGBT4 Modules
SKM300GBD12T4
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
• Current source inverter
Remarks
• The Fig.1 to Fig.9 are based on
measurements of the SKM300GB12T4
• The series diodes (FWD) have the
data of the inverse diodes of
SKM400GB12T4
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product rel.
results valid for Tj = 150°
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
Conditions
V_CC = 600 V
T_j = 150 °C
I_C = 300 A
V_GE = ±15 V
R_{G on} = 1.5 
R_{G off} = 1.5 
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_on = 7500 A/µs T_j = 150 °C
di/dt_off = 3350 A/µs _{Tj = 150 °C}
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 50 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 50 A
T_j = 150 °C
di/dt_off = 7300 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 400 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 150 °C
I_F = 400 A
T_j = 150 °C
di/dt_off = 8800 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
to terminals M6
w
min.
typ.
max. Unit
200
ns
44
ns
27
mJ
450
ns
90
ns
29
mJ
0.11 K/W
2.41
2.74
V
2.45
2.79
V
1.3
1.5
V
0.9
1.1
V
22.2
24.8 m
31.0
33.8 m
A
µC
mJ
0.94 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
2.3
2.5
m
3.1
3.4
m
450
A
68
µC
30.5
mJ
0.14 K/W
15
20
nH
0.25
m
0.5
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GBD
2
Rev. 3 – 03.09.2013
© by SEMIKRON