SKM300GBD12T4 Datasheet, PDF (1/5 Pages) Semikron International – Fast IGBT4 Modules

SKM300GBD12T4
SEMITRANS^® 3
Fast IGBT4 Modules
SKM300GBD12T4
Features
• IGBT4 = 4. generation fast trench IGBT
(Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
20kHz
• UL recognized, file no. E63532
Typical Applications*
• Current source inverter
Remarks
• The Fig.1 to Fig.9 are based on
measurements of the SKM300GB12T4
• The series diodes (FWD) have the
data of the inverse diodes of
SKM400GB12T4
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product rel.
results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
V_GES
t_psc
T_j
V_CC = 800 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Freewheeling diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 3xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_terminal = 80 °C
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
I_C = 300 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 12 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
Values
1200
422
324
300
900
-20 ... 20
10
-40 ... 175
56
43
50
150
180
-40 ... 175
440
329
400
1200
1980
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
3.50
4.00 m
5.17
5.50 m
5
5.8
6.5
V
4.0
mA
mA
18.6
nF
1.16
nF
1.02
nF
1700
nC
2.5

GBD
© by SEMIKRON
Rev. 3 – 03.09.2013
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