SKM25GAH125D Datasheet, PDF (2/5 Pages) Semikron International – IGBT Modules

SKM25GAH125D
SEMITRANS^® 6
IGBT Modules
SKM25GAH125D
Target Data
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – motor
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
Conditions
V_CC = 600 V
I_C = 25 A
V_GE = ±15 V
R_{G on} = 16 
R_{G off} = 16 
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 40 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 125 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
I_F = 25 A
V_GE = ±15 V
V_CC = 600 V
per diode
T_j = 25 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
Freewheeling diode
V_F = V_EC
I_F = 40 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 125 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 125 °C
I_F = 25 A
T_j = 125 °C
di/dt_off = 2500 A/µs
V_GE = ±15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
per module
M_s
to heat sink M6
M_t
w
min.
typ.
max. Unit
25
ns
19
ns
3.9
mJ
184
ns
8
ns
1.6
mJ
0.56 K/W
2.13
2.65
V
1.94
2.46
V
1.1
1.45
V
0.85
1.2
V
25.7
30.0 m
27.1
31.4 m
A
µC
mJ
1
K/W
2.00
2.5
V
1.8
2.3
V
1.1
1.45
V
1.18
1.2
V
22.5
30.0 m
27.1
31.4 m
50
A
4
µC
1.1
mJ
1
K/W
60
nH
m
m
0.05 K/W
4
5
Nm
Nm
Nm
175
g
GAH
2
Rev. 1 – 05.12.2012
© by SEMIKRON