SKM25GAH125D Datasheet, PDF (1/5 Pages) Semikron International – IGBT Modules

SKM25GAH125D
SEMITRANS^® 6
IGBT Modules
SKM25GAH125D
Target Data
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
• DC – motor
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 2xI_Cnom
V_GES
t_psc
T_j
V_CC = 600 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Freewheeling diode
I_F
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_terminal = 80 °C
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
I_C = 25 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 1 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 20 V
T_j = 25 °C
Values
1200
39
27
25
50
-20 ... 20
10
-55 ... 150
47
32
40
80
410
-40 ... 150
47
32
40
80
410
-40 ... 150
100
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
3.20
3.70
V
3.60
4.20
V
1.5
1.75
V
1.7
1.95
V
68.00 78.00 m
76.00 90.00 m
4.5
5.5
6.5
V
0.1
0.3
mA
mA
1.65
nF
0.25
nF
0.11
nF
221
nC
0.00

GAH
© by SEMIKRON
Rev. 1 – 05.12.2012
1