SKM200GB12V_1106 Datasheet, PDF (2/5 Pages) Semikron International – SEMITRANS® 3

SKM200GB12V
SEMITRANS^® 3
SKM200GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 200 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 200 A
T_j = 150 °C
di/dt_off = 5300 A/µs
V_GE = ±15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
m
6.3
6.8
m
230
A
30
µC
13
mJ
0.26 K/W
15
20
nH
0.25
m
0.5
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GB
2
Rev. 5 – 17.06.2011
© by SEMIKRON