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SKM200GB12V_1106 Datasheet, PDF (1/5 Pages) Semikron International – SEMITRANS® 3
SKM200GB12V
SEMITRANS® 3
SKM200GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 8 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
VCC = 600 V
Tj = 150 °C
IC = 200 A
VGE = ±15 V
RG on = 3 
RG off = 3 
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 7000 A/µs Tj = 150 °C
di/dtoff = 2300 A/µs
du/dtoff = 6900 V/ Tj = 150 °C
µs
per IGBT
Values
1200
311
237
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.5
typ.
1.75
2.20
0.94
0.88
4.05
6.60
6
0.1
12.02
1.18
1.178
2210
3.8
320
45
14
550
72
22
max. Unit
2.20
V
2.50
V
1.04
V
0.98
V
5.8
m
7.60 m
6.5
V
0.3
mA
mA
nF
nF
nF
nC

ns
ns
mJ
ns
ns
mJ
0.14 K/W
GB
© by SEMIKRON
Rev. 5 – 17.06.2011
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