SKM200GB12T4_0906 Datasheet, PDF (2/5 Pages) Semikron International – Fast IGBT4 Modules

SKM200GB12T4
SEMITRANS^®3
Fast IGBT4 Modules
SKM200GB12T4
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 200 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 200 A
T_j = 150 °C
di/dt_off = 4450 A/µs
V_GE = ±15 V
T_j = 150 °C
V_CC = 600 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M6
w
min.
typ.
max. Unit
2.2
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
mΩ
6.3
6.8
mΩ
174
A
33
µC
13
mJ
0.26 K/W
15
20
nH
0.25
mΩ
0.5
mΩ
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
GB
2
Rev. 2 – 16.06.2009
© by SEMIKRON