SKM200GB12T4_0906 Datasheet, PDF (1/5 Pages) Semikron International – Fast IGBT4 Modules

SKM200GB12T4
SEMITRANS^®3
Fast IGBT4 Modules
SKM200GB12T4
Features
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
T_c = 125°C max, recomm.
T_op = -40 ... +150°C, product
rel. results valid for T_j = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 800 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 150 °C
Inverse diode
I_F
I_Fnom
I_FRM
I_FSM
T_j
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_FRM = 3xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 200 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 7.6 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
T_j = 150 °C
I_C = 200 A
T_j = 150 °C
V_GE = ±15 V
R_{G on} = 1 Ω
R_{G off} = 1 Ω
T_j = 150 °C
T_j = 150 °C
di/dt_on = 5500 A/µs ^Tj ^{= 150 °C}
di/dt_off = 2300 A/µs _{Tj = 150 °C}
per IGBT
Values
1200
314
242
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.8
2.05
V
2.2
2.4
V
0.8
0.9
V
0.7
0.8
V
5.0
5.8
mΩ
7.5
8.0
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
12.3
nF
0.81
nF
0.69
nF
1130
nC
3.8
Ω
185
ns
40
ns
21
mJ
425
ns
82
ns
20
mJ
0.14 K/W
GB
© by SEMIKRON
Rev. 2 – 16.06.2009
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