SKM200GB123D_06 Datasheet, PDF (2/6 Pages) Semikron International – Trench IGBT Modules

SKM 200GB123D
SEMITRANS^® 3
Trench IGBT Modules
SKM 200GB123D
SKM 200GAL123D
SKM 200GAR123D
Features
 ^{     }
 ^{     }
 ^{    }
 ^{      }
     
 ^{!    "  #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
. 
 ^{   /0   }
    12 
Typical Applications
 ^{+*   }
 ^34
Characteristics
Symbol Conditions
Inverse Diode
₍ 5 _8* &_{( } 5 /62 +? ₌₈ 5 2 
₍₂
₍
&_<<
J_
8_
&_{( } 5 /62 +
N 5 /622 +NB
₌₈ 5 '/6 ? _ 5 $22
<_{ 9',}
 
Freewheeling Diode
₍ 5 _8* &_{( } 5 122 +? ₌₈ 5 2 
₍₂
₍
&_<<
J_
8_
<_{ 9'(,}
Module
_*8
<_**PE88P
&_{( } 5 122 +
N 5 1222 +NB
₌₈ 5 2 ? _** 5 $22 
 
C  '
<_{ '}



 
   Q $
   $ D
.₉ 5 16 7*_{ C}
.₉ 5 /16 7*_{ C}
.₉ 5 16 7*
.₉ 5 /16 7*
.₉ 5 16 7*
.₉ 5 /16 7*
.₉ 5 /16 7*
.₉ 5 16 7*_{ C}
.₉ 5 /16 7*_{ C}
.₉ 5 16 7*
.₉ 5 /16 7*
.₉ 5 16 7*
.₉ 5 /16 7*
.₉ 5 /16 7*
._5 16 7*
._5 /16 7*
min.
0
16
typ.
1
/;
//
$
G2
;
$$
1
/;
//
D6
/12
//
/6
206
26
max. Units
16


/1


;F
H
H
+
B*
L
216 MNO
16


/1


$6


+
B*
L
2/; MNO
12
!
H
H
220; MNO
6

6

016

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
07-03-2007 RAA
© by SEMIKRON