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SKM200GAL12E4_13 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules
SKM200GAL12E4
SEMITRANS® 3
IGBT4 Modules
SKM200GAL12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 600 V
Tj = 150 °C
IC = 200 A
VGE = ±15 V
RG on = 1 
RG off = 1 
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 5500 A/µs Tj = 150 °C
di/dtoff = 2300 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 200 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 4450 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 200 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 4450 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink M6
Mt
to terminals M6
w
min.
typ.
max. Unit
204
ns
40
ns
21
mJ
490
ns
107
ns
27
mJ
0.14 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
m
6.3
6.8
m
174
A
33
µC
13
mJ
0.26 K/W
2.20
2.52
V
2.15
2.47
V
1.3
1.5
V
0.9
1.1
V
4.5
5.1
m
6.3
6.8
m
174
A
33.1
µC
13
mJ
0.26 K/W
15
20
nH
0.25
m
0.5
m
0.02
0.038 K/W
3
5
Nm
2.5
5
Nm
Nm
325
g
GAL
2
Rev. 3 – 21.08.2013
© by SEMIKRON