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SKM200GAL12E4_13 Datasheet, PDF (1/5 Pages) Semikron International – IGBT4 Modules | |||
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SKM200GAL12E4
SEMITRANS® 3
IGBT4 Modules
SKM200GAL12E4
Features
⢠IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
⢠CAL4 = Soft switching 4. generation
CAL-diode
⢠Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
⢠Increased power cycling capability
⢠With integrated gate resistor
⢠For higher switching frequenzies up to
12kHz
⢠UL recognized, file no. E63532
Typical Applications*
⢠DC/DC â converter
⢠Brake chopper
⢠Switched reluctance motor
Remarks
⢠Case temperature limited
to Tc = 125°C max.
⢠Recommended Top = -40 ... +150°C
⢠Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 7.6 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
313
241
200
600
-20 ... 20
10
-40 ... 175
229
172
200
600
990
-40 ... 175
229
172
200
600
990
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.80
2.05
V
2.20
2.40
V
0.8
0.9
V
0.7
0.8
V
5.00
5.75 mï
7.50
8.00 mï
5
5.8
6.5
V
2.7
mA
mA
12.3
nF
0.81
nF
0.69
nF
1130
nC
3.8
ï
GAL
© by SEMIKRON
Rev. 3 â 21.08.2013
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