SKM195GAL126D Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKM195GAL126D
SEMITRANS^® 2
Trench IGBT Modules
SKM195GAL126D
Features
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x I_C
• UL recognized, file no. E63532
Typical Applications*
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Characteristics
Symbol
t_d(on)
t_r
E_on
t_d(off)
t_f
Conditions
V_CC = 600 V
I_C = 150 A
V_GE = +15/-15 V
R_{G on} = 2 Ω
R_{G off} = 2 Ω
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Inverse diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 125 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 125 °C
I_F = 100 A
T_j = 125 °C
di/dt_off = 2200 A/µs
V_GE = -15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 100 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 125 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
chiplevel
T_j = 25 °C
T_j = 125 °C
I_F = 100 A
T_j = 125 °C
di/dt_off = 2200 A/µs
V_GE = ±15 V
T_j = 125 °C
V_CC = 600 V
T_j = 125 °C
per Diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink M6
to terminals M5
w
min.
typ.
max. Unit
280
ns
50
ns
16
mJ
560
ns
70
ns
24.5
mJ
0.16 K/W
2.00
2.50
V
1.80
2.30
V
1.1
1.45
V
0.85
1.2
V
9
11
mΩ
9.5
11
mΩ
86
A
17
µC
5.8
mJ
0.32 K/W
2.00
2.50
V
1.80
2.30
V
1.1
1.45
V
0.85
1.2
V
9
11
mΩ
9.5
11
mΩ
86
A
17
µC
5.8
mJ
0.32 K/W
30
nH
0.75
mΩ
1
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 1.0 – 20.07.2015
© by SEMIKRON