SKM195GAL126D Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SKM195GAL126D
SEMITRANS^® 2
Trench IGBT Modules
SKM195GAL126D
Features
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x I_C
• UL recognized, file no. E63532
Typical Applications*
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 2xI_Cnom
V_GES
t_psc
T_j
V_CC = 600 V
V_GE ≤ 15 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Freewheeling diode
I_F
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
I_C = 150 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 6 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 125 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 20 V
T_j = 25 °C
Values
1200
220
164
150
300
-20 ... 20
10
-40 ... 150
143
98
100
200
1110
-40 ... 150
143
98
100
200
1110
-40 ... 150
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.71
2.10
V
2.00
2.45
V
1
1.2
V
0.9
1.1
V
4.7
6
mΩ
7.3
9
mΩ
5
5.8
6.5
V
2
mA
mA
10.8
nF
0.56
nF
0.49
nF
1380
nC
5
Ω
GAL
© by SEMIKRON
Rev. 1.0 – 20.07.2015
1