SKM150GB17E4G Datasheet, PDF (2/4 Pages) Semikron International – IGBT4 Modules

SKM150GB17E4G
SEMITRANS^® 3
IGBT4 Modules
SKM150GB17E4G
Target Data
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Wind power
• Public transport
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 150 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
chiplevel
T_j = 25 °C
T_j = 150 °C
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
R_th(c-s)
chiplevel
I_F = 150 A
T_j = 25 °C
T_j = 150 °C
T_j = 150 °C
V_GE = ±15 V
V_CC = 1200 V
per diode
T_j = 150 °C
T_j = 150 °C
per diode (λ_grease=0.81 W/(m*K))
Module
L_CE
R_CC'+EE'
measured per
switch
T_C = 25 °C
T_C = 125 °C
R_th(c-s)1
R_th(c-s)2
calculated without thermal coupling
including thermal coupling,
Ts underneath module (λ_grease=0.81 W/
(m*K))
M_s
to heat sink M6
M_t
to terminals M6
min.
3
2.5
w
typ.
max. Unit
2.00
2.14
1.32
1.08
4.5
7.1
185
49
33
0.039
2.40
V
2.56
V
1.56
V
1.22
V
5.6
mΩ
9.0
mΩ
A
µC
mJ
0.356 K/W
K/W
15
0.55
0.85
0.009
0.015
nH
mΩ
mΩ
K/W
K/W
5
Nm
5
Nm
Nm
325
g
GB
2
Rev. 0.1 – 11.11.2016
© by SEMIKRON