SKM150GB17E4G Datasheet, PDF (1/4 Pages) Semikron International – IGBT4 Modules

SKM150GB17E4G
SEMITRANS^® 3
IGBT4 Modules
SKM150GB17E4G
Target Data
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Wind power
• Public transport
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
GB
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 3xI_Cnom
V_CC = 1000 V
V_GE ≤ 15 V
V_CES ≤ 1700 V
T_j = 150 °C
Inverse diode
V_RRM
I_F
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FSM
T_j
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
I_C = 150 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 6 mA
V_GE = 0 V
V_CE = 1700 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 1200 V
I_C = 150 A
V_GE = +15/-15 V
R_{G on} = 1 Ω
R_{G off} = 1 Ω
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
E_off
T_j = 150 °C
R_th(j-c)
R_th(c-s)
per IGBT
per IGBT (λ_grease=0.81 W/(m*K))
Rev. 0.1 – 11.11.2016
Values
1700
242
187
150
450
-20 ... 20
10
-40 ... 175
1700
163
121
150
300
918
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5.2
typ.
1.90
2.35
0.80
0.70
7.3
11
5.8
-
13.6
0.53
0.44
1200
4.3
205
23.5
39
550
150
59
0.035
max. Unit
2.21
V
2.60
V
0.90
V
0.80
V
8.7
mΩ
12
mΩ
6.4
V
2.0
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.161 K/W
K/W
1