SKM100GB123D_06 Datasheet, PDF (2/6 Pages) Semikron International – IGBT Modules

SKM 100GB123D
SEMITRANS^® 2
IGBT Modules
SKM 100GB123D
SKM 100GAL123D
SKM 100GAR123D
Features
 ^{     }
 ^{     }
 ^{    }
 ^{!      }
     
 ^{    "! #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
. !
 ^{   /0   }
    10 
Typical Applications
 ^{+*   }
 ^23
Characteristics
Symbol Conditions
Inverse Diode
( ⁴ 7*
&_{( } 4 D5 +? ₌₇ 4 0
(0
₍
&_<<
J_
7_
&_{( } 4 D5 +
N 4 :00 +NB
=7 ^{4 0 ?} ** ^{4 $00}
<_{ 8',}
 
Freewheeling Diode
( ⁴ 7*
&_{( } 4 /00 +? ₌₇ 4 0
(0
₍
&_<<
J_
7_
<_{ 8'(,}
Module
_*7
<_**PG77P
&_{( } 4 /00 +
N 4 /000 +NB
=7 ^{4 0 ?} ** ^{4 $00}
 
C  '
<_{ '}



 
   Q $
   5
min.
.₈ 4 15 6*_{ C}
.₈ 4 /15 6*_{ C}
.₈ 4 15 6*
.₈ 4 /15 6*
.₈ 4 15 6*
.₈ 4 /15 6*
.₈ 4 /15 6*
.₈ 4 15 6*_{ C}
.₈ 4 /15 6*_{ C}
.₈ 4 15 6*
.₈ 4 /15 6*
.₈ 4 15 6*
.₈ 4 /15 6*
.₈ 4 15 6*
._4 15 6*
._4 /15 6*
E
15
typ.
1
/:
//
/1
F0
E
1
/:
//
;
50
5
0D5
/
max. Units
15
/1
/D
H
H
+
B*
L
05
MNO
15
/1
/E
+
B*
L
0E$ MNO
E0

H
H
005 MNO
5

5

/$0

This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
GAR
2
19-10-2006 RAA
© by SEMIKRON