SKM100GB123D_06 Datasheet, PDF (1/6 Pages) Semikron International – IGBT Modules

SKM 100GB123D
SEMITRANS^® 2
IGBT Modules
SKM 100GB123D
SKM 100GAL123D
SKM 100GAR123D
Features
 ^{     }
 ^{     }
 ^{    }
 ^{!      }
     
 ^{    "! #}
   $ % &_{ }
 ^{' #}
 ^{( ) #   *+ }
 ^{&   "   }
,*- , *  -  
. !
 ^{   /0   }
    10 
Typical Applications
 ^{+*   }
 ^23
Absolute Maximum Ratings
Symbol Conditions
IGBT
._ 4 15 6*     #
Values
Units
*7
&_*
.₈ 4 15 6*
.₈ 4 /50 6*
._ 4 15 6*
._ 4 :0 6*
/100
/00
+
;0
+
&_*<
&_*<41%&_{* }
/50
+
=7
 _
** ^{4 $00 ?} =7 ^{@ 10 ?}
*7 A /100
Inverse Diode
.₈ 4 /15 6*
&₍
.₈ 4 /50 6*
._ 4 15 6*
._ 4 :0 6*
> 10
/0
B
;5
+
$5
+
&_(<
&_(<41%&_{( }
/50
+
&_(
 4 /0 ?  C
Freewheeling Diode
.₈ 4 /50 6*
D10
+
&₍
.₈ 4 /50 6*
._ 4 15 6*
/E0
+
._ 4 :0 6*
;0
+
&_(<
&_(<41%&_{( }
100
+
&_(
Module
 4 /0 ?  C
.₈ 4 /50 6*
;00
+
& _<
._8
100
+
' F0CCC G /50
6*
._
' F0CCCG /15
6*

+* /  C
1500
Characteristics
Symbol Conditions
IGBT
=7 
&_*7
=7 ⁴ *7^{ &}* ^{4 1 +}
=7 ^{4 0 } *7 ⁴ *7
*70
_*7
=7 ^{4 /5}
*7 
*_
*_
*_
J₌
<_{= 
  
}
7_{
 ##
#}
7_##
<_{ 8'}
&_{* } 4 D5 + ₌₇ 4 /5
*7 ^{4 15} =7 ^{4 0}
=7 ^{4 ': ' G10}
.₈ 4 6*
<_= 4 /5 H
<_=## 4 /5 H
 &=-.
._ 4 15 6*     #
min. typ. max. Units
.₈ 4 15 6*
.₈ 4 15 6*
.₈ 4 /15 6*
.₈ 4 156*
.₈ 4 /156*
.₈ 4 6*_{ C}
# 4 / I
** ^{4 $00}
&_{* }4 D5+
.₈ 4 /15 6*
=7 ^{4 > /5}
F5
55
$5
0/
0E
+
/F
/$
/$
/:
/F$
/:$ H
10
15E H
15
E
5
$$
(
0D1
0;
(
0E:
05
(
D50
*
5
K
E0
$0

D0
/F0

/0
L
F50
$00

D0
;0

:
L
0/: MNO
GB
GAL
GAR
1
19-10-2006 RAA
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