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SKM100GAR17E4 Datasheet, PDF (2/5 Pages) Semikron International – IGBT4 Modules
SKM100GAR17E4
SEMITRANS® 2
IGBT4 Modules
SKM100GAR17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 1200 V
Tj = 150 °C
IC = 100 A
VGE = +15/-15 V
RG on = 2 Ω
RG off = 2 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 2540 A/µs Tj = 150 °C
di/dtoff = 610 A/µs
du/dt = 5430 V/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 100 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 2360 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 1200 V
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 100 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 2360 A/µs
VGE = ±15 V
Tj = 150 °C
VCC = 1200 V
Tj = 150 °C
per Diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink M6
to terminals M5
w
min.
typ.
max. Unit
234
ns
39
ns
43
mJ
657
ns
136
ns
39
mJ
0.234 K/W
2.00
2.40
V
2.15
2.57
V
1.32
1.56
V
1.08
1.22
V
6.8
8.4
mΩ
11
14
mΩ
86
A
34
µC
26
mJ
0.504 K/W
2.00
2.40
V
2.15
2.57
V
1.32
1.56
V
1.08
1.22
V
6.8
8.4
mΩ
10.7
13.5 mΩ
86
A
34
µC
26
mJ
0.504 K/W
30
nH
0.65
mΩ
1.09
mΩ
0.04
0.05 K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAR
2
Rev. 2.0 – 24.06.2015
© by SEMIKRON