SKM100GAR17E4 Datasheet, PDF (1/5 Pages) Semikron International – IGBT4 Modules

SKM100GAR17E4
SEMITRANS^® 2
IGBT4 Modules
SKM100GAR17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to T_c = 125°C max.
• Recommended T_op = -40 ... +150°C
• Product reliability results valid
for T_j = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 25 °C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
I_CRM = 3xI_Cnom
V_GES
t_psc
T_j
V_CC = 1000 V
V_GE ≤ 15 V
V_CES ≤ 1700 V
T_j = 150 °C
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Freewheeling diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
I_C = 100 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
chiplevel
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 4 mA
V_GE = 0 V
V_CE = 1700 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
Values
1700
164
127
100
300
-20 ... 20
10
-40 ... 175
113
83
100
200
650
-40 ... 175
113
83
100
200
650
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.90
2.20
V
2.30
2.60
V
0.8
0.9
V
0.7
0.8
V
11
13
mΩ
16
18
mΩ
5.2
5.8
6.4
V
1
mA
mA
9
nF
0.34
nF
0.29
nF
800
nC
7.5
Ω
GAR
© by SEMIKRON
Rev. 2.0 – 24.06.2015
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