SKIM609GAR12E4_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SKiM609GAR12E4
SKiM^® 93
Trench IGBT Modules
SKiM609GAR12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V_CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al₂O₃ DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x I_C
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Characteristics
Symbol Conditions
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-s)
V_CC = 600 V
T_j = 150 °C
I_C = 600 A
V_GE = 15 V
R_{G on} = 4.1 
R_{G off} = 4.1 
di/dt_on = 5000 A/µs
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
T_j = 150 °C
di/dt_off = 4400 A/µs _{Tj = 150 °C}
per IGBT
Inverse diode
V_F = V_EC
I_F = 150 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-s)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 150 A
T_j = 150 °C
di/dt_off = 3300 A/µs
V_GE = -15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
Freewheeling diode
V_F = V_EC
I_F = 600 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-s)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 600 A
T_j = 150 °C
di/dt_off = 5300 A/µs
V_GE = -15 V
V_CC = 600 V
T_j = 150 °C
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
terminal-chip
T_s = 25 °C
T_s = 125 °C
w
Temperatur Sensor
R₁₀₀
T_Sensor = 100 °C (R₂₅ = 5 k)
B_100/125
R_(T) = R₁₀₀exp[B_100/125(1/T-1/373)];
T[K];
min.
1.1
0.7
4.3
6.7
1.1
0.7
0.5
0.7
typ.
150
121
136
808
100
83
2.1
2.1
1.3
0.9
5.6
7.8
153
15
9
1.7
1.4
1.3
0.9
0.6
0.9
510
123
39
10
0.3
0.5
1042
339
4096
max.
0.068
Unit
ns
ns
mJ
ns
ns
mJ
K/W
2.5
V
2.4
V
1.5
V
1.1
V
6.4
m
8.5
m
A
µC
mJ
0.501 K/W
1.9
V
1.7
V
1.5
V
1.1
V
0.7
m
0.9
m
A
µC
mJ
0.048 K/W
15
nH
m
m
g

K
GAR
2
Rev. 3 – 14.07.2011
© by SEMIKRON