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| SKIM609GAR12E4_11 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SKiM609GAR12E4
SKiM® 93
Trench IGBT Modules
SKiM609GAR12E4
Features
⢠IGBT 4 Trench Gate Technology
⢠Solderless sinter technology
⢠VCE(sat) with positive temperature
coefficient
⢠Low inductance case
⢠Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
⢠Pressure contact technology for
thermal contacts and electrical
contacts
⢠High short circuit capability, self limiting
to 6 x IC
⢠Integrated temperature sensor
Typical Applications*
⢠Automotive inverter
⢠High reliability AC inverter wind
⢠High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ⤠15 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 24 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
748
608
600
1800
-20 ... 20
10
-40 ... 175
139
110
600
1800
900
-40 ... 175
1397
1107
1350
4050
6480
-40 ... 175
700
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.85
2.25
0.8
0.7
1.8
2.6
5.8
0.1
35.20
2.32
1.88
3400
1.3
max. Unit
2.10
V
2.45
V
0.9
V
0.8
V
2.0
mï
2.8
mï
6.5
V
0.3
mA
mA
nF
nF
nF
nC
ï
GAR
© by SEMIKRON
Rev. 3 â 14.07.2011
1
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