SKHI24 Datasheet, PDF (2/8 Pages) Semikron International – Hybrid Dual IGBT Driver

External Components
Component
R_CE
Function
Reference voltage for V_CE-monitoring
V_CEstat(V) = -11---00----+-^â‹---R-R---^C-_C---^E-_E--⁽-₍-k-k---^Ω-_Ω----⁾-₎ – 1,4
Recommended Value
10kΩ < R_CE < 100kΩ
(1) 18kΩ for SKM XX 123 (1200V)
36kΩ for SKM XX 173 (1700V)
with R_VCE = 1kΩ (1700V IGBT):
V_CEstat(V)
=
-1----0----^â‹---R----^C----^E---⁽--k----^Ω-----⁾- – 1,8
10 + R_CE(kΩ)
(1.1)
C_CE
Inhibit time for V_CE - monitoring
C_CE < 2,7nF
t_min
=
τ_CE ⋅ ln
-1---5----–-----V----^C----^E---^s--^t--^a--^t--⁽--V-----⁾
10 – V_CEstat(V)
(2) ^{0,33nF for SKM XX 123 (1200V)}
0,47nF for SKM XX 173 (1700V)
τ_CE(µs)
=
C_C
E⁽
nF
)
⋅
-1---0-----^â‹---R----^C----^E---⁽--k----^Ω-----⁾-
10 + R_CE(kΩ)
0,5µs < t_min < 10µs
(3)
R_VCE
R_ERROR
Collector series resistance for 1700V
IGBT-operation
Pull-up resistance at error output
U-----_{P---u---l-l---–---U----p-}
R_ERROR
<
15mA
1kΩ / 0,4W
1kΩ < R_ERROR < 10kΩ
R_GON
R_GOFF
Turn-on speed of the IGBT ³⁾
Turn-off speed of the IGBT ⁴⁾
R_GON > 1,5Ω
R_GOFF > 1,5Ω
3) _{Higher resistance reduces free-wheeling diode peak recovery current, increases IGBT turn-on time.}
4) _{Higher resistance reduces turn-off peak voltage, increases turn-off time and turn-off power dissipation}
1916 Driver Electronic – PCB Drivers
22-08-2003 © by SEMIKRON