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SEMIX604GAL12E4S Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX604GAL12E4s
SEMiX® 4s
Trench IGBT Modules
SEMiX604GAL12E4s
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 ï
RGoff,main = 6,2 ï
RG,X = 2,2 ï
RE,X = 0,5 ï
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
Conditions
VCC = 600 V
IC = 600 A
Tj = 150 °C
Tj = 150 °C
RG on = 1.7 ï
RG off = 6.9 ï
Tj = 150 °C
Tj = 150 °C
di/dton = 7100 A/µs Tj = 150 °C
di/dtoff = 6350 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 600 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 6000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 600 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 6000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
min.
1.1
0.7
1.1
1.7
1.1
0.7
1.1
1.7
3
2.5
typ.
374
85
35
1277
114
110.4
2.1
2.1
1.3
0.9
1.4
1.9
430
100
44
2.1
2.1
1.3
0.9
1.4
1.9
430
100
44
22
0.7
1
0.03
max.
0.049
2.46
2.4
1.5
1.1
1.6
2.1
0.086
2.46
2.4
1.5
1.1
1.6
2.1
0.086
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 kï)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
400
493 ± 5%
3550
±2%
Unit
ns
ns
mJ
ns
ns
mJ
K/W
V
V
V
V
mï
mï
A
µC
mJ
K/W
V
V
V
V
mï
mï
A
µC
mJ
K/W
nH
mï
mï
K/W
Nm
Nm
Nm
g
ï
K
GAL
2
Rev. 0 â 16.11.2010
© by SEMIKRON
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