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| SEMIX604GAL12E4S Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX604GAL12E4s
SEMiX® 4s
Trench IGBT Modules
SEMiX604GAL12E4s
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 ï
RGoff,main = 6,2 ï
RG,X = 2,2 ï
RE,X = 0,5 ï
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ⤠20 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 24 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
916
704
600
1800
-20 ... 20
10
-40 ... 175
707
529
600
1800
3240
-40 ... 175
707
529
600
1800
3240
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
1.7
2.5
5.8
0.12
37.2
2.32
2.04
3400
1.25
max. Unit
2.05
V
2.4
V
0.9
V
0.8
V
1.9
mï
2.7
mï
6.5
V
0.36
mA
mA
nF
nF
nF
nC
ï
GAL
© by SEMIKRON
Rev. 0 â 16.11.2010
1
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