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SEMIX603GAR066HDS_10 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules
SEMiX603GAR066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAR066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 300 V
IC = 600 A
RG on = 3 Ω
RG off = 3 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 600 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 600 A
Tj = 150 °C
di/dtoff = 3800 A/µs
VGE = -8 V
Tj = 150 °C
VCC = 300 V
Tj = 150 °C
Rth(j-c)
per diode
Freewheeling diode
VF = VEC
IF = 600 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
Tj = 25 °C
Tj = 150 °C
rF
Tj = 25 °C
Tj = 150 °C
IRRM
Qrr
Err
IF = 600 A
Tj = 150 °C
di/dtoff = 3800 A/µs
VGE = -8 V
Tj = 150 °C
VCC = 300 V
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip TC = 25 °C
TC = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
150
145
12
1050
105
43
max.
0.087
Unit
ns
ns
mJ
ns
ns
mJ
K/W
1.4
1.60
V
1.4
1.6
V
0.9
1
1.1
V
0.75
0.85
0.95
V
0.5
0.7
0.8
mΩ
0.8
0.9
1.1
mΩ
350
A
63
µC
13
mJ
0.11 K/W
1.3
1.5
V
1.3
1.5
V
0.9
1
1.1
V
0.75
0.85
0.95
V
0.4
0.6
0.7
mΩ
0.7
0.8
0.9
mΩ
350
A
63
µC
13
mJ
0.11 K/W
20
nH
0.7
mΩ
1
mΩ
0.04
K/W
3
5
Nm
2.5
5
Nm
Nm
300
g
493 ± 5%
Ω
3550
±2%
K
GAR
2
Rev. 0 – 16.04.2010
© by SEMIKRON