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| SEMIX603GAR066HDS_10 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX603GAR066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAR066HDs
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications*
⢠Matrix Converter
⢠Resonant Inverter
⢠Current Source Inverter
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠For short circuit: Soft RGoff
recommended
⢠Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 360 V
VGE ⤠15 V
VCES ⤠600 V
Tj = 150 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9.6 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
600
720
541
600
1200
-20 ... 20
6
-40 ... 175
771
562
600
1200
1800
-40 ... 175
795
577
600
1200
1800
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.85
V
1.7
2.1
V
0.9
1
V
0.85
0.9
V
0.9
1.4
mâ¦
1.4
2.0
mâ¦
5
5.8
6.5
V
0.15
0.45 mA
mA
37.0
nF
2.31
nF
1.10
nF
4800
nC
0.67
â¦
GAR
© by SEMIKRON
Rev. 0 â 16.04.2010
1
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