SEMIX353GB126HDS_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX353GB126HDs
SEMiX^® 3s
Trench IGBT Modules
SEMiX353GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T_C=125°C
max.
• Not for new design
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 225 A
V_GE = 0 V
chip
T_j = 25 °C
T_j = 125 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
I_F = 225 A
T_j = 125 °C
di/dt_off = 5600 A/µs
V_GE = -15 V
V_CC = 600 V
T_j = 125 °C
T_j = 125 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip
T_C = 25 °C
T_C = 125 °C
R_th(c-s)
M_s
M_t
per module
to heat sink (M5)
to terminals (M6)
min.
0.9
0.7
2.2
3.1
3
2.5
typ.
1.6
1.6
1
0.8
2.7
3.6
330
69
29
20
0.7
1
0.04
max.
1.80
1.8
1.1
0.9
3.1
4.0
0.17
5
5
w
Temperatur Sensor
R₁₀₀
T_c=100°C (R₂₅=5 k)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];
300
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g

K
GB
2
Rev. 1 – 23.03.2011
© by SEMIKRON